powerdi is a registered trademark of diodes incorporated. dm n6013lfgq document number: d s 3 8870 rev. 1 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated d mn6013lfgq advance information 60v n - channel enhancement mode mosfet powerdi product summary b v dss r ds(on) max i d max t a = + 25c 6 0v 13 m ? @ v gs = 10 v 10.3 a 18 m ? @ v gs = 4.5 v 8.8 a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? motor c ontrol ? dc to dc converters ? reverse p olarity p rotection features and benefits ? low r ds(on) C ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so - 8 enabling smaller end product ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: p ower di3333 - 8 ? case material: molded plastic, "green" molding compound , ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm n 60 13 l fg q - 7 p ower di3333 - 8 2 , 0 00 /tape & reel dm n 60 13 lfg q - 13 p ower di3333 - 8 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . automotive products are aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/ product_compliance_definitions .html . 5. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information top view bottom view p ower di3333 - 8 n63 = product type marking code yyww = date code marking yy = last two d igit s of y ear (ex: 1 6 = 201 6 ) ww = week c ode (01 to 53) d s g equivalent circuit n 63 y yww s s s g d d d d pin 1
powerdi is a registered trademark of diodes incorporated. dm n6013lfgq document number: d s 3 8870 rev. 1 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated d mn6013lfgq advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 6 0 v gate - source voltage v gss 20 v continuous drain current (note 7 ) v gs = 10 v t a = + 25c t a = + 70c i d 10.3 8.3 a t c = + 25c t c = + 10 0c i d 45 28 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 58.3 a maximum continuous body diode f orward current (note 7 ) i s 3 a avalanche current, l = 0. 1 mh i as 33.3 a a valanche energy , l = 0. 1 mh e as 56.8 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) p d 1 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 1 23 c/w t < 10s 6 9 total power dissipation (note 7 ) p d 2.1 w thermal resistance, junction to ambient (note 7 ) s teady state r ? ja 60 c/w t < 10s 34 total power dissipation (note 7 ) p d 40 w thermal resistance, junction to case (note 7 ) r ? j c 6.7 c/w operating and storage temperature range t j, t stg - 55 to +1 50 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 60 gs = 0v, i d = 250a j = +25c i dss ds = 60 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 1 1.8 3 v v ds = v gs , i d = 250 a ds(on) gs = 10 v, i d = 10 a gs = 4 .5 v, i d = 8 a diode forward voltage v sd gs = 0v, i s = 1.7 a dynamic characteristics (note 9 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 3 0 v, i d = 10 a total gate charge ( v gs = 10 v ) q g gs gd d( on ) gs = 10 v , v ds = 30 v , r g = 3 d = 1 0 a turn - on rise time t r d( off ) f rr ? ? f = 10 a, di/dt = 1 0 0a/s rr ? ? notes: 6 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
powerdi is a registered trademark of diodes incorporated. dm n6013lfgq document number: d s 3 8870 rev. 1 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated d mn6013lfgq advance information i , drain current (a) d figure 5 typical on - resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0 2 4 6 8 10 12 14 16 18 20 t = - 55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs v , gate - source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a i d , drain current (a) r d s(on) , drain - source on - resistance ( v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0 3 6 9 12 15 18 21 24 27 30 0 0.5 1 1.5 2 2.5 3 v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.006 0.008 0.01 0.012 0.014 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.005 0.01 0.015 0.02 0.025 0.03 0 2 4 6 8 10 12 14 16 18 20 i = 10a d i = 8ma d t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 v = v i = 10a gs d 10 v = 4.5v i = 8a gs d
powerdi is a registered trademark of diodes incorporated. dm n6013lfgq document number: d s 3 8870 rev. 1 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated d mn6013lfgq advance information 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 55 60 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10 typical junction capacitance f = 1mhz c iss c oss c rss v , drain - source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds( on ) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 t = 150c t = 25c v = 10v single pulse j(max) a gs dut on 1 * mrp board v , source - drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t = 125c a t = 85c a t = 150c a t = - 55c a t = 25c a t , junction temperature ( c) figure 8 gate threshold variation vs. junction temperature j ? ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v gs(th) , gate threshold voltage ( v ) i s , source current ( a ) i d , drain current ( a ) t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.004 0.008 0.012 0.016 0.02 0.024 0.028 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 8a gs d v = v i = 10a gs d 10 q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 6 12 18 24 30 36 42 48 54 60 v = 30v i = a ds d 10
powerdi is a registered trademark of diodes incorporated. dm n6013lfgq document number: d s 3 8870 rev. 1 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated d mn6013lfgq advance information r ja (t) = r(t) * r ja r ja = 1 26 /w duty cycle, d = t1/t2 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 126 C /w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000
powerdi is a registered trademark of diodes incorporated. dm n6013lfgq document number: d s 3 8870 rev. 1 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated d mn6013lfgq advance information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. p ower di3333 - 8 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. p ower di3333 - 8 p ower di3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? b 0.27 0.37 0.32 b2 0.15 0.25 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e3 0.79 0.89 0.84 e4 1.60 1.70 1.65 e ? ? ? ? l 0.35 0.45 0.40 l1 ? ? ? ? z ? ? ? ? all dimensions in mm dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) 1 8 e3 e4 x3 y3 x y c y1 y2 x1 x2 1 8
powerdi is a registered trademark of diodes incorporated. dm n6013lfgq document number: d s 3 8870 rev. 1 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated d mn6013lfgq advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes. com
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